山形大学
有機エレクトロニクスイノベーションセンター
硯里研究室
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【論文掲載】D2佐々木樹(高橋研究室、硯里研究室)と硯里善幸教授のウェットプロセスによるハイバリア膜に関する論文がアメリカ化学会のACS Applied nano materials(IF: 5.097)に掲載されました。
【論文掲載】D2佐々木樹(高橋研究室、硯里研究室)と硯里善幸教授のウェットプロセスによるハイバリア膜に関する論文 Nanometer-Thick SiN Films as Gas Barrier Coatings Densified by Vacuum UV Irradiation が、アメリカ化学会のACS Applied nano materials(IF: 5.097)に掲載されました。
著者:Tatsuki Sasaki, Lina Sun, Yu Kurosawa, Tatsuhiro Takahashi, Yoshiyuki Suzuri*
https://pubs.acs.org/doi/10.1021/acsanm.1c01862
Abstract: Gas barrier films are widely used in electronic and packaging applications. They are also critical components of flexible organic light-emitting diodes (FOLEDs) that require high gas barrier performance. Among the various film manufacturing techniques, solution-processed thin-film encapsulation (TFE) represents a low-cost FOLED fabrication method. The nanometer-thick SiN films produced following the vacuum ultraviolet (VUV)-induced densification of solution-processed perhydropolysilazane (PHPS) films in a N2 atmosphere can potentially serve as TFE barrier films. However, the nanometer-thick PHPS densification process has not been examined in sufficient detail. We investigated and discussed the effects of the Si–N bond number, PHPS film composition, and free volume (present in the produced Si–N network) on the VUV-induced PHPS densification process. It was found that VUV irradiation caused rapid hydrogen release and film densification through the formation of Si–N bonds. The results obtained using the X-ray photoelectron spectroscopy and dynamic secondary ion mass spectrometry techniques, and the calculated residual hydrogen ratios, revealed that the film composition was strongly related to the number of residual hydrogen atoms and Si–N bonds. Notably, nanometer-thick PHPS film densification was a relatively slow process, in which the free volume in the Si–N network was considerably reduced by the atomic rearrangement induced by the simultaneous cleavage of several Si–N bonds during VUV irradiation. We believe that the results presented herein can potentially serve as a guideline for developing solution-processed nanometer-thick SiN films with relatively high density and excellent gas barrier performance (that is comparable to that exhibited by vacuum-processed barrier films).